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Same model may have multiple batches, images only for reference.
SI3443CDV-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI3443CDV-T1-GE3

Part No SI3443CDV-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 5.97A 6TSOP
Datasheet
SI3443CDV-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 5.97A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 12.4nC @ 5V
Max Input Capacitance 610pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 2W (Ta), 3.2W (Tc)
Maximum Rds On at Id,Vgs 60 mOhm @ 4.7A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 028426-SI3443CDV-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Application Field Used in Industrial, Power Management, Portable Devices
Ultra Librarian 3D Model Ultra Librarian SI3443CDV-T1-GE3 CAD Model

Description

The Vishay 028426-SI3443CDV-T1-GE3 is a P-channel MOSFET designed for use in industrial, power management, and portable devices.

  • Maximum Power Dissipation: 2W (Ta) and 3.2W (Tc)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 5.97A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Maximum Gate-Source Voltage: ±12V
  • Maximum Rds On: 60 mOhm @ 4.7A, 4.5V
  • Package: 6-TSOP
  • Dimensions: SOT-23-6 Thin and TSOT-23-6
  • Popularity: high
  • Supply and Demand Status: sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
385+ $0.1312 $50.5120
930+ $0.1076 $100.0680
1,440+ $0.1043 $150.1920
1,985+ $0.1009 $200.2865
2,565+ $0.0975 $250.0875
3,430+ $0.0875 $300.1250
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