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Same model may have multiple batches, images only for reference.
BTS121ANKSA1 Real Image
Same model may have multiple batches, images only for reference.

BTS121ANKSA1

Part No BTS121ANKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 22A TO-220AB
Datasheet
BTS121ANKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Input Capacitance 1500pF @ 25V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 95W (Tc)
Maximum Rds On at Id,Vgs 100 mOhm @ 9.5A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Win Source Part Number 1024853-BTS121ANKSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BTS121ANKSA1 CAD Model

Description

The BTS121ANKSA1 from Infineon Technologies is a N-channel MOSFET transistor.

  • Maximum Power Dissipation: 95W (Tc)
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 22A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 2.5V @ 1mA
  • Maximum Input Capacitance: 1500pF @ 25V
  • Package: PG-TO-220-3
  • Mounting: through hole
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $6.6274 $59.6466
22+ $5.4377 $119.6294
33+ $5.2680 $173.8440
46+ $5.0982 $234.5172
59+ $4.9284 $290.7756
79+ $4.4179 $349.0141
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Availability: 19,400 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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