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Same model may have multiple batches, images only for reference.
SI3456DDV-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI3456DDV-T1-E3

Part No SI3456DDV-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 6.3A 6TSOP
Datasheet
SI3456DDV-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 6.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 9nC @ 10V
Max Input Capacitance 325pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.7W (Ta), 2.7W (Tc)
Maximum Rds On at Id,Vgs 40 mOhm @ 5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 064449-SI3456DDV-T1-E3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI3456DDV-T1-E3 CAD Model

Description

The Vishay SI3456DDV-T1-E3 is an N-channel MOSFET with a drain-source breakdown voltage of 30V and a continuous drain current of 6.3A (Tc).

  • Maximum Power Dissipation: 1.7W (Ta), 2.7W (Tc)
  • Maximum Rds On at Id,Vgs: 40 mOhm @ 5A, 10V
  • Drive Voltage: 4.5V, 10V
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 9nC @ 10V
  • Maximum Input Capacitance: 325pF @ 15V

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Pricing & Ordering

Quantity Unit Price Ext. Price
360+ $0.1619 $58.2840
870+ $0.1328 $115.5360
1,350+ $0.1287 $173.7450
1,860+ $0.1245 $231.5700
2,400+ $0.1204 $288.9600
3,215+ $0.1079 $346.8985
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 99,900 pieces
MOQ: 360 pcs
Order Increment : 1 pcs
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