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SI3459BDV-T1-GE3 Real Image SI3459BDV-T1-GE3 real image5418
Same model may have multiple batches, images only for reference.
SI3459BDV-T1-GE3 Real Image SI3459BDV-T1-GE3 real image5418
SI3459BDV-T1-GE3 Real Image SI3459BDV-T1-GE3 real image5418
Same model may have multiple batches, images only for reference.

SI3459BDV-T1-GE3

Part No SI3459BDV-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 2.9A 6-TSOP
Datasheet
SI3459BDV-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 2.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 12nC @ 10V
Max Input Capacitance 350pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2W (Ta), 3.3W (Tc)
Maximum Rds On at Id,Vgs 216 mOhm @ 2.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 064452-SI3459BDV-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI3459BDV-T1-GE3 CAD Model

Description

The Vishay 064452-SI3459BDV-T1-GE3 MOSFET is a P-channel device with a drain-source breakdown voltage of 60V and a continuous drain current of 2.9A @ 25°C.

  • Maximum Rds On: 216 mOhm @ Id, Vgs of 2.2A and 10V
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 12nC @ 10V
  • Maximum Input Capacitance: 350pF @ 30V
  • Maximum Gate-Source Voltage: ±20V

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Pricing & Ordering

Quantity Unit Price Ext. Price
130+ $0.3847 $50.0110
280+ $0.3603 $100.8840
435+ $0.3481 $151.4235
620+ $0.3238 $200.7560
805+ $0.3116 $250.8380
1,005+ $0.2995 $300.9975
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 28,099 pieces
MOQ: 130 pcs
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