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Same model may have multiple batches, images only for reference.
SI3459DV-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI3459DV-T1-E3

Part No SI3459DV-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 2.2A 6-TSOP
Datasheet
SI3459DV-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA (Min)
Max Gate Charge 14nC @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 220 mOhm @ 2.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 098983-SI3459DV-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI3459DV-T1-E3 CAD Model

Description

Vishay has designed the SI3459DV-T1-E3 electronic component for discrete semiconductor products.

  • Power Dissipation: 2W (Ta)
  • Drive Voltage: 4.5V, 10V (Max Rds On, Min Rds On)
  • Temperature Range: -55°C to 150°C (TJ)
  • Continuous Drain Current: 2.2A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 1V @ 250μA (Min)
  • Maximum Gate Charge: 14nC @ 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On at Id, Vgs: 220 mOhm @ 2.2A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4967 $59.6040
285+ $0.4077 $116.1945
440+ $0.3950 $173.8000
605+ $0.3823 $231.2915
785+ $0.3696 $290.1360
1,050+ $0.3315 $348.0750
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 49,700 pieces
MOQ: 120 pcs
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