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SI3473DV-T1-E3 Vishay SI3473DV-T1-E3 Real Image
Same model may have multiple batches, images only for reference.
SI3473DV-T1-E3 Vishay SI3473DV-T1-E3 Real Image
SI3473DV-T1-E3 Vishay SI3473DV-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI3473DV-T1-E3

Part No SI3473DV-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 12V 5.9A 6-TSOP
Datasheet
SI3473DV-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 5.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 33nC @ 4.5V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.1W (Ta)
Maximum Rds On at Id,Vgs 23 mOhm @ 7.9A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 028437-SI3473DV-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI3473DV-T1-E3 CAD Model

Description

The Vishay MOSFET SI3473DV-T1-E3 is a P-channel MOSFET that has a maximum power dissipation of 1.1W (Ta).

  • Drain-Source Breakdown Voltage: 12V
  • Continuous Drain Current @ 25°C: 5.9A (Ta)
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 33nC @ 4.5V
  • Maximum Rds On at Id,Vgs: 23 mOhm @ 7.9A, 4.5V
  • Maximum Gate-Source Voltage: ±8V
  • Status: obsolete (EOL)
  • Popularity: medium
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.7842 $62.4470
80+ $1.4640 $117.1200
125+ $1.4183 $177.2875
170+ $1.3725 $233.3250
220+ $1.3268 $291.8960
295+ $1.1896 $350.9320
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,730 pieces
MOQ: 35 pcs
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