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Same model may have multiple batches, images only for reference.
SI3473DV-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI3473DV-T1-GE3

Part No SI3473DV-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 12V 5.9A 6-TSOP
Datasheet
SI3473DV-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 5.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 33nC @ 4.5V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.1W (Ta)
Maximum Rds On at Id,Vgs 23 mOhm @ 7.9A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 1095849-SI3473DV-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI3473DV-T1-GE3 CAD Model

Description

The Vishay 1095849-SI3473DV-T1-GE3 is a P-Channel MOSFET with a drain-source breakdown voltage of 12V and a maximum Rds On at Id,Vgs of 23 mOhm @ 7.9A, 4.5V.

  • Voltage - Drain to Source Breakdown (Vdss): 12V
  • Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.9A, 4.5V
  • Power - Max: 1.1W (Ta)
  • Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
  • Vgs(th) (Max) @ Id: 1V @ 250μA
  • Gate Charge @ Vgs: 33nC @ 4.5V

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.6052 $60.5200
235+ $0.4967 $116.7245
360+ $0.4816 $173.3760
500+ $0.4655 $232.7500
645+ $0.4505 $290.5725
860+ $0.4043 $347.6980
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