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Same model may have multiple batches, images only for reference.
SI3474DV-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI3474DV-T1-GE3

Part No SI3474DV-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 3.8A TSOP-6
Datasheet
SI3474DV-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 3.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 10.4nC @ 10V
Max Input Capacitance 196pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.6W (Tc)
Maximum Rds On at Id,Vgs 126 mOhm @ 2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 1095850-SI3474DV-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI3474DV-T1-GE3 CAD Model

Description

The SI3474DV-T1-GE3 is an N-channel MOSFET designed for surface mount applications.

  • Channel Type: N-channel
  • Mounting Type: Surface Mount
  • Package: 6-TSOP
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 3.8A (Tc)
  • Maximum Rds On: 126 mOhm @ 2A, 10V
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 10.4nC @ 10V
  • Maximum Input Capacitance: 196pF @ 50V
  • Operating Temperature: -55°C to 150°C (TJ)
  • Application: Discrete Semiconductor Products

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Pricing & Ordering

Quantity Unit Price Ext. Price
155+ $0.3238 $50.1890
380+ $0.2657 $100.9660
585+ $0.2574 $150.5790
805+ $0.2491 $200.5255
1,040+ $0.2408 $250.4320
1,390+ $0.2159 $300.1010
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