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SI3552DV-T1-E3

Part No SI3552DV-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N/P-CH 30V 2.5A/1.8A 6-Pin TSOP T/R / MOSFET N/P-CH 30V 6TSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Maximum Rds On at Id,Vgs 105 mOhm @ 2.5A, 10V
Gate-Source Threshold Voltage 1V @ 250μA (Min)
Max Gate Charge 3.2nC @ 5V
Maximum Power Dissipation 1.15W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Win Source Part Number 028440-SI3552DV-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name SI3552DV
Introduction Date April 18, 2000
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian SI3552DV-T1-E3 CAD Model

Description

The Vishay 028440-SI3552DV-T1-E3 is an N and P-Channel logic level gate FET that belongs to the discrete semiconductor products category.

  • Popularity: High
  • Supply and Demand Status: Balance
  • Maximum Power Dissipation: 1.15W
  • Operating Temperature Range: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
20+ $2.5902 $51.8040
48+ $2.1253 $102.0144
73+ $2.0589 $150.2997
101+ $1.9925 $201.2425
130+ $1.9261 $250.3930
174+ $1.7268 $300.4632
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 33,000 pieces
MOQ: 20 pcs
Order Increment : 1 pcs
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