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Same model may have multiple batches, images only for reference.
SI3552DV-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI3552DV-T1-GE3

Part No SI3552DV-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 30V 6-TSOP / Trans MOSFET N/P-CH 30V 2.5A/1.8A 6-Pin TSOP T/R
Datasheet
SI3552DV-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Maximum Rds On at Id,Vgs 105 mOhm @ 2.5A, 10V
Gate-Source Threshold Voltage 1V @ 250μA (Min)
Max Gate Charge 3.2nC @ 5V
Maximum Power Dissipation 1.15W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Win Source Part Number 136483-SI3552DV-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name SI3552DV
Introduction Date April 18, 2000
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian SI3552DV-T1-GE3 CAD Model

Description

This electronic component, part number 136483-SI3552DV-T1-GE3, is manufactured by Vishay and is categorized as a discrete semiconductor product.

  • Status: Active
  • Operating Temperature Range: -55°C to 150°C
  • Packaging: Reel-TR
  • Mounting: SMD (SMT) technology
  • FET Type: N and P-Channel
  • Gate Feature: Logic Level
  • Maximum Power Dissipation: 1.15W
  • Drain-Source Breakdown Voltage: 30V
  • Gate-Source Threshold Voltage: 1V @ 250μA (Min)
  • Maximum Gate Charge: 3.2nC @ 5V
  • Halogen-Free: Yes
  • ECCN: EAR99
  • Estimated EOL Date: 2027
  • Counterfeit Threat: 49%
  • Supply and Demand Status: Balanced

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Quantity Unit Price Ext. Price
90+ $0.5865 $52.7850
210+ $0.4813 $101.0730
325+ $0.4662 $151.5150
445+ $0.4512 $200.7840
575+ $0.4361 $250.7575
770+ $0.3910 $301.0700
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Availability: 54,000 pieces
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