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Same model may have multiple batches, images only for reference.
SI3805DV-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI3805DV-T1-E3

Part No SI3805DV-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 3.3A 6-TSOP
Datasheet
SI3805DV-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 12nC @ 10V
Max Input Capacitance 330pF @ 10V
Maximum Gate-Source Voltage ±12V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 1.1W (Ta), 1.4W (Tc)
Maximum Rds On at Id,Vgs 84 mOhm @ 3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 1095862-SI3805DV-T1-E3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI3805DV-T1-E3 CAD Model

Description

The Vishay SI3805DV-T1-E3 is an SMD (SMT) MOSFET with a Schottky diode feature. SI3805DV-T1-E3 is designed by Vishay.

  • Feature: Schottky diode that is isolated
  • Polarity: P-channel
  • Power Dissipation: 1.1W (Ta), 1.4W (Tc)
  • Drive Voltage (Max Rds on, Min Rds on): 2.5V, 10V
  • Temperature Range: -55°C to 150°C (TJ)
  • Package: 6-TSOP
  • Category: discrete semiconductor products
  • Supply and demand status: sufficient

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