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Same model may have multiple batches, images only for reference.
SI3853DV-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI3853DV-T1-E3

Part No SI3853DV-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 1.6A 6-TSOP
Datasheet
SI3853DV-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 500mV @ 250μA (Min)
Max Gate Charge 4nC @ 4.5V
Maximum Gate-Source Voltage ±12V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 830mW (Ta)
Maximum Rds On at Id,Vgs 200 mOhm @ 1.8A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 109260-SI3853DV-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI3853DV-T1-E3 CAD Model

Description

The electronic component with Id 328742 is a P-Channel MOSFET from the manufacturer Vishay.

  • Supply and Demand Status: Balanced
  • Status: Obsolete (EOL)
  • Maximum Power Dissipation: 830mW (Ta)
  • Schottky Diode: Yes (isolated)
  • Drain-Source Breakdown Voltage: 20V
  • Maximum Rds On at Id,Vgs: 200 mOhm @ 1.8A, 4.5V
  • Package: 6-TSOP
  • Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6817 $58.8595
85+ $1.3802 $117.3170
130+ $1.3363 $173.7190
180+ $1.2936 $232.8480
235+ $1.2509 $293.9615
310+ $1.1215 $347.6650
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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