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Same model may have multiple batches, images only for reference.
SI3909DV-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI3909DV-T1-GE3

Part No SI3909DV-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 20V 6TSOP
Datasheet
SI3909DV-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Maximum Rds On at Id,Vgs 200 mOhm @ 1.8A, 4.5V
Gate-Source Threshold Voltage 500mV @ 250μA (Min)
Max Gate Charge 4nC @ 4.5V
Maximum Power Dissipation 1.15W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Win Source Part Number 1095873-SI3909DV-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI3909DV-T1-GE3 CAD Model

Description

The Vishay SI3909DV-T1-GE3 is an obsolete (EOL) dual P-channel logic level gate FET designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 1.15W
  • Drain-Source Breakdown Voltage: 20V
  • Maximum Rds On (Id,Vgs): 200 mOhm @ 1.8A, 4.5V
  • Supply and Demand: Balance

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Pricing & Ordering

Quantity Unit Price Ext. Price
125+ $0.4798 $59.9750
295+ $0.3938 $116.1710
455+ $0.3814 $173.5370
630+ $0.3691 $232.5330
810+ $0.3568 $289.0080
1,085+ $0.3199 $347.0915
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,000 pieces
MOQ: 125 pcs
Order Increment : 1 pcs
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