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Same model may have multiple batches, images only for reference.
SI3911DV-T1-E3 Vishay
Same model may have multiple batches, images only for reference.

SI3911DV-T1-E3

Part No SI3911DV-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 20V 1.8A 6TSOP
Datasheet
SI3911DV-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Cut Reel
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 1.8A
Maximum Rds On at Id,Vgs 145 mOhm @ 2.2A, 4.5V
Gate-Source Threshold Voltage 450mV @ 250μA (Min)
Max Gate Charge 7.5nC @ 4.5V
Maximum Power Dissipation 830mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Win Source Part Number 095212-SI3911DV-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI3911DV-T1-E3 CAD Model

Description

The Vishay 2 P-Channel (Dual) FET is a high-quality FET designed for industrial, power management, consumer electronics, and portable devices.

  • Maximum Power Dissipation: 830mW
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current at 25°C: 1.8A
  • Packaging: Cut Reel
  • Mounting Style: SMD
  • Category: Discrete Semiconductor Products
  • Size: 6-TSOP
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
155+ $0.3754 $58.1870
375+ $0.3081 $115.5375
585+ $0.2985 $174.6225
800+ $0.2888 $231.0400
1,035+ $0.2792 $288.9720
1,385+ $0.2503 $346.6655
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 155 pcs
Order Increment : 1 pcs
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