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Same model may have multiple batches, images only for reference.
SI3951DV-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI3951DV-T1-E3

Part No SI3951DV-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 20V 2.7A 6-TSOP
Datasheet
SI3951DV-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.7A
Maximum Rds On at Id,Vgs 115 mOhm @ 2.5A, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 5.1nC @ 5V
Max Input Capacitance 250pF @ 10V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Win Source Part Number 1095875-SI3951DV-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI3951DV-T1-E3 CAD Model

Description

This electronic component is a dual P-Channel MOSFET transistor that belongs to the category of Discrete Semiconductor Products.

  • Win Source Part Number: 1095875-SI3951DV-T1-E3
  • Manufacturer: Vishay
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current (25°C): 2.7A

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.5254 $57.7940
270+ $0.4312 $116.4240
415+ $0.4176 $173.3040
575+ $0.4043 $232.4725
740+ $0.3908 $289.1920
990+ $0.3504 $346.8960
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Availability: 19,100 pieces
MOQ: 110 pcs
Order Increment : 1 pcs
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