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Same model may have multiple batches, images only for reference.
SI3981DV-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI3981DV-T1-GE3

Part No SI3981DV-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 20V 1.6A 6-TSOP
Datasheet
SI3981DV-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 1.6A
Maximum Rds On at Id,Vgs 185 mOhm @ 1.9A, 4.5V
Gate-Source Threshold Voltage 1.1V @ 250μA
Max Gate Charge 5nC @ 4.5V
Maximum Power Dissipation 800mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Win Source Part Number 1095876-SI3981DV-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI3981DV-T1-GE3 CAD Model

Description

The Vishay SI3981DV-T1-GE3 is a 2 P-Channel (Dual) logic level gate FET designed for use in various discrete semiconductor products.

  • Manufacturer: Vishay
  • Product Name: SI3981DV-T1-GE3
  • Channel Type: 2 P-Channel (Dual)
  • Gate Type: Logic Level
  • Status: Obsolete
  • Maximum Power Dissipation: 800mW
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 1.6A @ 25°C
  • Gate-Source Threshold Voltage: 1.1V @ 250μA
  • Maximum Rds On: 185 mOhm @ 1.9A, 4.5V
  • Package: 6-TSOP
  • Supply and Demand Status: Sufficient

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