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Same model may have multiple batches, images only for reference.
SI4100DY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4100DY-T1-E3

Part No SI4100DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 6.8A 8-SOIC
Datasheet
SI4100DY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 6.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 600pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 6W (Tc)
Maximum Rds On at Id,Vgs 63 mOhm @ 4.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 064462-SI4100DY-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI4100DY-T1-E3 CAD Model

Description

The Vishay SI4100DY-T1-E3 is an N-channel MOSFET with a drain-source breakdown voltage of 100V and a continuous drain current of 6.8A @ 25°C.

  • Maximum Rds On: 63 mOhm @ 4.4A and 10V
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Package: 8-SO
  • Dimension: 8-SOIC (0.154", 3.90mm Width)
  • Application: discrete semiconductor products, such as power management and industrial applications.
  • Supply and Demand Status: limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8736 $61.1520
165+ $0.7169 $118.2885
250+ $0.6945 $173.6250
345+ $0.6721 $231.8745
445+ $0.6497 $289.1165
595+ $0.5825 $346.5875
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Availability: 15,346 pieces
MOQ: 70 pcs
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