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Same model may have multiple batches, images only for reference.
SI4102DY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4102DY-T1-E3

Part No SI4102DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 3.8A 8-SOIC
Datasheet
SI4102DY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 3.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 11nC @ 10V
Max Input Capacitance 370pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.4W (Ta), 4.8W (Tc)
Maximum Rds On at Id,Vgs 158 mOhm @ 2.7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1095890-SI4102DY-T1-E3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI4102DY-T1-E3 CAD Model

Description

The Vishay SI4102DY-T1-E3 is an N-channel MOSFET, designed for use in discrete semiconductor products.

  • Package: Reel
  • Mounting: Surface-Mounted
  • Power Dissipation (Ta): 2.4W
  • Power Dissipation (Tc): 4.8W
  • Drain-Source Breakdown Voltage: 100V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 11nC @ 10V
  • Maximum Input Capacitance: 370pF @ 50V
  • Maximum Rds On @ Id, Vgs: 158 mOhm @ 2.7A, 10V

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