The Vishay SI4170DY-T1-GE3 is a MOSFET with a polarity of N-Channel and a drain-source breakdown voltage of 30V.

• Polarity: N-Channel
• Drain-Source Breakdown Voltage: 30V
• Power Dissipation: 3W (Ta) or 6W (Tc)
• Continuous Drain Current: 30A (Tc) @ 25°C
• Gate-Source Threshold Voltage: 2.6V @ 250μA
• Maximum Gate-Source Voltage: ±20V
• Maximum Rds On @ Id,Vgs: 3.5 mOhm @ 15A, 10V
• Max Gate Charge: 100nC @ 10V
• Package: 8-SO
• Operating Temperature: -55°C to 150°C (TJ)
• Supply and Demand Status: Balanced
• Lifecycle Status: Obsolete (EOL)