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Same model may have multiple batches, images only for reference.
SI4320DY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4320DY-T1-E3

Part No SI4320DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 17A 8-SOIC
Datasheet
SI4320DY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 17A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 70nC @ 4.5V
Max Input Capacitance 6500pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.6W (Ta)
Maximum Rds On at Id,Vgs 3 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 028464-SI4320DY-T1-E3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI4320DY-T1-E3 CAD Model

Description

The SI4320DY-T1-E3 from Vishay is an N-channel MOSFET that is designed for use in various electronic circuits.

  • Popularity: medium
  • Supply and Demand Status: sufficient
  • Package: 8-SOIC package
  • Maximum Drain-Source Voltage Rating: 30V
  • Maximum Continuous Drain Current Rating: 17A
  • Maximum Power Dissipation: 1.6W

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.3664 $61.4880
105+ $1.1215 $117.7575
160+ $1.0857 $173.7120
220+ $1.0511 $231.2420
285+ $1.0164 $289.6740
385+ $0.9113 $350.8505
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,177 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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