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Same model may have multiple batches, images only for reference.
SI4362BDY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4362BDY-T1-GE3

Part No SI4362BDY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.6mOhm @ 19.8A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 115 nC @ 10 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 4800 pF @ 15 V
Power Dissipation (Max) 3W (Ta), 6.6W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
Base Product Number SI4362
Standard Package 2,500
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277512-SI4362BDY-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SI4362BDY-T1-GE3 CAD Model

Description

The SI4362BDY-T1-GE3 is a TrenchFET® N-channel MOSFET from Vishay Siliconix.

  • Drain to Source Voltage (Vdss): 30 V
  • Continuous Drain Current (Id): 29A (Tc) @ 25°C
  • Rds On (Max) @ Id, Vgs: 4.6mOhm @ 19.8A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
  • Package: 8-SOIC (0.154", 3.90mm Width)
  • Operating Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.0416 $61.2480
70+ $1.6752 $117.2640
110+ $1.6229 $178.5190
150+ $1.5705 $235.5750
195+ $1.5181 $296.0295
255+ $1.3611 $347.0805
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,750 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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