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SI4411DY-T1-GE3

Part No SI4411DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 9A 8SO  /  P-Channel 30 V 9A (Ta) 1.5W (Ta) Surface Mount 8-SOIC
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 10mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 65 nC @ 5 V
Vgs (Max) ±20V
Power Dissipation (Max) 1.5W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
Base Product Number SI4411
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 2,500
Win Source Part Number 976644-SI4411DY-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SI4411DY-T1-GE3 CAD Model

Description

The Vishay Siliconix SI4411DY-T1-GE3 is a P-channel MOSFET that is designed for use in electronic devices.

  • Packaging: Tape and Reel
  • Standard Package: 2,500 units
  • HTSUS: 8541.29.0095
  • MSL Level: 1 (unlimited)
  • Base Product Number: SI4411

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