The Vishay SI4413ADY-T1-GE3 is a P-channel MOSFET transistor with a drain-source breakdown voltage of 30V and a continuous drain current of 10.5A (Ta).

• Drain-Source Breakdown Voltage: 30V
• Continuous Drain Current (Ta): 10.5A
• Mounting Type: Surface Mount
• Package: 8-SOIC (0.154", 3.90mm Width)
• Operating Temperature Range: -55°C to 150°C (TJ)
• Power Dissipation (Ta): 1.5W
• Maximum Gate-Source Voltage: ±20V
• Maximum Rds On @ Id,Vgs: 9.7 mOhm @ 16.5A, 10V
• Supply and Demand Status: Balanced
• Quantity per Package: 2500
• MSL Level: 1 (Unlimited)
• Estimated Production Lead Time: 51 weeks
• HTSUS Code: 8541.29.0095
• Category: Discrete Semiconductor Products