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Same model may have multiple batches, images only for reference.
SI4426DY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4426DY-T1-E3

Part No SI4426DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 6.5A 8-SOIC
Datasheet
SI4426DY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.4V @ 250μA
Max Gate Charge 50nC @ 4.5V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.5W (Ta)
Maximum Rds On at Id,Vgs 25 mOhm @ 8.5A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 028482-SI4426DY-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI4426DY-T1-E3 CAD Model

Description

This Vishay electronic component is a MOSFET technology device with an 8-SO case/package.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 6.5A
  • Maximum Gate-Source Voltage: ±12V
  • Maximum Rds On @ Id,Vgs: 25 mOhm @ 8.5A, 4.5V
  • Usage: common-used part
  • Popularity: high
  • Supply and Demand Status: sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
185+ $0.3153 $58.3305
450+ $0.2587 $116.4150
695+ $0.2506 $174.1670
955+ $0.2426 $231.6830
1,235+ $0.2345 $289.6075
1,650+ $0.2102 $346.8300
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,220 pieces
MOQ: 185 pcs
Order Increment : 1 pcs
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