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SI4438DY-T1-E3

Part No SI4438DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 36A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.6V @ 250μA
Max Gate Charge 126nC @ 10V
Max Input Capacitance 4645pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.5W (Ta), 7.8W (Tc)
Maximum Rds On at Id,Vgs 2.7 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 028492-SI4438DY-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4438DY-T1-E3 CAD Model

Description

The Vishay SI4438DY-T1-E3 is a N-channel MOSFET that is widely used in discrete semiconductor products.

  • Package: 8-SOIC (0.154", 3.90mm Width)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 36A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 2.6V @ 250μA
  • Maximum Gate Charge: 126nC @ 10V
  • Maximum Input Capacitance: 4645pF @ 15V
  • Operating Temperature: -55°C to 150°C (TJ)
  • Maximum Rds On @ Id, Vgs: 2.7 mOhm @ 20A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6435 $57.9150
220+ $0.5281 $116.1820
340+ $0.5116 $173.9440
470+ $0.4950 $232.6500
605+ $0.4786 $289.5530
810+ $0.4290 $347.4900
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 13,618 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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