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Same model may have multiple batches, images only for reference.
SI4448DY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4448DY-T1-E3

Part No SI4448DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 12V 50A 8-SOIC
Datasheet
SI4448DY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Series TrenchFET
Packaging Reel - TR
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 12V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Vgs(th) (Maximum) @ Id 1V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 150nC @ 4.5V
Input Capacitance (Ciss) (Maximum) @ Vds 12350pF @ 6V
Vgs (Maximum) ±8V
Power Dissipation (Maximum) 3.5W (Ta), 7.8W (Tc)
Rds On (Maximum) @ Id, Vgs 1.7 mOhm @ 20A, 4.5V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package 8-SO
Package 8-SOIC (0.154", 3.90mm Width)
Manufacturer Homepage www.vishay.com
Win Source Part Number 712131-SI4448DY-T1-E3
Popularity Medium
Supply and Demand Status Limited
Family Name Si4448DY
Introduction Date January 08, 2008
ECCN EAR99
Country of Origin China
Estimated EOL Date End of life (Obsolete)
Ultra Librarian 3D Model Ultra Librarian SI4448DY-T1-E3 CAD Model

Description

The Vishay Si4448DY is an N-channel MOSFET transistor with a maximum drain-source voltage of 12V and a continuous drain current of 50A.

  • Series: TrenchFET
  • Package: 8-SOIC
  • Mounting: Through-hole
  • Gate-Source Voltage: ±8V
  • Maximum Power Dissipation: 3.5W (Ta)
  • Maximum Rds On: 1.7 mOhm @ 20A, 4.5V
  • Gate Charge (Qg): 150nC @ Maximum Vgs
  • Input Capacitance (Ciss): 12350pF @ Maximum Vds
  • Obsolete: Not recommended for new designs

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