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Same model may have multiple batches, images only for reference.
SI4465ADY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4465ADY-T1-GE3

Part No SI4465ADY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 8V 8SOIC / Trans MOSFET P-CH 8V 13.7A 8-Pin SOIC N T/R
Datasheet
SI4465ADY-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Series TrenchFET
Packaging Reel package
Channel Type Type P
Technology MOSFET
Drain Source Voltage 8V
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Vgs(th) (Maximum) @ Id 1V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 85nC @ 4.5V
Vgs (Maximum) ±8V
Power Dissipation (Maximum) 3W (Ta), 6.5W (Tc)
Rds On (Maximum) @ Id, Vgs 9 mOhm @ 14A, 4.5V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package 8-SO
Package 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 794257-SI4465ADY-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Quantity per package 2,500
Family Name Si4465ADY
Introduction Date July 24, 2006
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian SI4465ADY-T1-GE3 CAD Model

Description

The Vishay Siliconix SI4465ADY-T1-GE3 is a MOSFET technology electronic component.

  • Series: TrenchFET
  • Package Type: 8-SOIC (0.154”, 3.90mm Width)
  • Mounting: SMD
  • Operating Temperature Range: -55°C to 150°C
  • Channel Type: P
  • Drain Source Voltage: 8V
  • Vgs(th) (Maximum) @ Id: 1V @ 250μA
  • Gate Charge (Qg) (Maximum) @ Vgs: 85nC @ 4.5V
  • Vgs (Maximum): ±8V
  • Power Dissipation (Maximum): 3W (Ta), 6.5W (Tc)
  • Rds On (Maximum) @ Id, Vgs: 9 mOhm @ 14A, 4.5V
  • Introduction Date: July 24, 2006
  • ECCN: EAR99
  • Estimated EOL Date: 2022
  • Compliance: Halogen-free
  • Supply & Demand Status: Limited
  • Quantity per Package: 2500

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141+ $2.1342 $300.9222
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Availability: 10,000 pieces
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