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SI4466DY-T1-E3

Part No SI4466DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 9.5A 8-SOIC
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 9.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.4V @ 250μA
Max Gate Charge 60nC @ 4.5V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.5W (Ta)
Maximum Rds On at Id,Vgs 9 mOhm @ 13.5A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 109682-SI4466DY-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI4466DY-T1-E3 CAD Model

Description

The Vishay 109682-SI4466DY-T1-E3 is a N-Channel MOSFET with a drain-source breakdown voltage of 20V and a maximum continuous drain current of 9.5A at 25°C.

  • Drain-Source Breakdown Voltage: 20V
  • Maximum Continuous Drain Current: 9.5A @ 25°C
  • Gate-Source Threshold Voltage: 1.4V @ 250μA
  • Maximum Gate Charge: 60nC @ 4.5V
  • Power Dissipation: 1.5W (Ta)
  • Case/Package: 8-SOIC (0.154", 3.90mm Width)
  • Mounting Technology: SMD (SMT)
  • Drive Voltage: 2.5V (Max Rds On), 4.5V (Min Rds On)
  • Popularity: High
  • Supply and Demand Status: Limited due to it being obsolete (EOL)

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Pricing & Ordering

Quantity Unit Price Ext. Price
150+ $0.3945 $59.1750
360+ $0.3238 $116.5680
555+ $0.3136 $174.0480
765+ $0.3035 $232.1775
985+ $0.2934 $288.9990
1,320+ $0.2630 $347.1600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 29,177 pieces
MOQ: 150 pcs
Order Increment : 1 pcs
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