The Vishay SI4490DY-T1-E3 is an N-channel MOSFET with a drain-source breakdown voltage of 200V and a continuous drain current of 2.85A at 25°C.

• Drain-Source Breakdown Voltage: 200V
• Continuous Drain Current: 2.85A @ 25°C
• Maximum Rds On: 80 mOhm @ 4A and 10V
• Maximum Gate-Source Voltage: ±20V
• Gate-Source Threshold Voltage: 2V @ 250μA
• Package: 8-SO
• Dimension: 8-SOIC (0.154", 3.90mm Width)
• Suitable for: Discrete semiconductor products, such as power management and industrial applications
• Supply and Demand Status: Limited