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SI4505DY-T1-GE3

Part No SI4505DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 30V/8V 8-SOIC / Trans MOSFET N/P-CH 30V/8V 6A/3.8A 8-Pin SOIC N T/R
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Series TrenchFET
Packaging Reel package
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain Source Voltage 30V, 8V
Current - Continuous Drain (Id) @ 25°C 6A, 3.8A
Rds On (Maximum) @ Id, Vgs 18 mOhm @ 7.8A, 10V
Vgs(th) (Maximum) @ Id 1.8V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 20nC @ 5V
Power - Max 1.2W
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Package 8-SOIC (0.154", 3.90mm Width)
Manufacturer Package 8-SO
Win Source Part Number 794258-SI4505DY-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Family Name Si4505DY
Introduction Date June 12, 2002
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian SI4505DY-T1-GE3 CAD Model

Description

The Vishay Siliconix SI4505DY-T1-GE3 is a N and P-Channel TrenchFET type electronic component that comes in a 8-SOIC (0.154&quot;, 3.90mm Width) package. It features a logic level gate and can handle a continuous drain current of 6A and 3.8A at 25°C. It has a maximum power rating of 1.2W. The Si4505DY family has a drain-source voltage of 30V and 8V, and a gate-source threshold voltage of 1.8V @ 250μA. The gate charge (Qg) is 20nC @ 5V, and the maximum Rds On is 18 mOhm @ 7.8A, 10V. It is compatible with the <a href='/silikron-semiconductor-co.ltd.-ssf4606.html'>SSF4606;</a> &nbsp;<a href='/fets-arrays-dmc3021lsd-13.html'>DMC3021LSD-13;</a> &nbsp;<a href='/magnachip-semiconductor-mds9652eurh.html'>MDS9652EURH;</a> &nbsp;<a href='/fets-arrays-sh8m13tb.html'>SH8M13TB;</a> &nbsp; alternative parts. The supply and demand status is limited, and it has an estimated EOL date of obsolete/end of life.

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