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SI4559ADY-T1-GE3

Name: SI4559ADY-T1-GE3
Brand: Vishay
SKU: 321953
Availability: InStock
Rating: 4.93 (58 reviews)

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This model is a standard, industry-grade component frequently used in electronic manufacturing.

Part No	SI4559ADY-T1-GE3
Manufacturer	Vishay
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N/P-CH 60V 5.3A 8-SOIC
Datasheet	SI4559ADY-T1-GE3 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Vishay
Packaging	Reel - TR
Status	Active
FET Type	N and P-Channel
FET Feature	Logic Level Gate
Drain-Source Breakdown Voltage	60V
Continuous Drain Current at 25°C	5.3A, 3.9A
Maximum Rds On at Id,Vgs	58 mOhm @ 4.3A, 10V
Gate-Source Threshold Voltage	3V @ 250μA
Max Gate Charge	20nC @ 10V
Max Input Capacitance	665pF @ 15V
Maximum Power Dissipation	3.1W, 3.4W
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	SMD (SMT)
Case / Package	8-SO
Win Source Part Number	028514-SI4559ADY-T1-GE3
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian SI4559ADY-T1-GE3 CAD Model

Alternative Products

Description

The Vishay SI4559ADY-T1-GE3 is an N and P-Channel MOSFET that is designed for use in discrete semiconductor products.

Drain-Source Breakdown Voltage: 60V
Continuous Drain Current @ 25°C: 5.3A and 3.9A
Gate-Source Threshold Voltage: 3V @ 250μA
Maximum Gate Charge: 20nC @ 10V
Maximum Rds On @ Id, Vgs: 58 mOhm @ 4.3A, 10V
Packaging: Supplied on a reel
Popularity: Medium

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
40+	$1.4256	$57.0240
75+	$1.3354	$100.1550
120+	$1.2903	$154.8360
170+	$1.2000	$204.0000
220+	$1.1549	$254.0780
275+	$1.1098	$305.1950

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 8,000 pieces

MOQ: 40 pcs

Order Increment : 1 pcs

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