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Same model may have multiple batches, images only for reference.
SI4622DY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4622DY-T1-GE3

Part No SI4622DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 8A 8-SOIC
Datasheet
SI4622DY-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8A
Maximum Rds On at Id,Vgs 16 mOhm @ 9.6A, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 60nC @ 10V
Max Input Capacitance 2458pF @ 15V
Maximum Power Dissipation 3.3W, 3.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1095972-SI4622DY-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian SI4622DY-T1-GE3 CAD Model

Description

The SI4622DY-T1-GE3 is a dual N-channel standard FET manufactured by Vishay.

  • Manufacturer: Vishay
  • Mounting: SMD package
  • Category: discrete semiconductor products
  • Product Status: obsolete (EOL)
  • Temperature Range: -55°C to 150°C (TJ)
  • Maximum Power Dissipation: 3.3W and 3.1W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current (25°C): 8A
  • Gate-Source Threshold Voltage: 2.5V @ 1mA
  • Maximum Gate Charge: 60nC @ 10V
  • Maximum Input Capacitance: 2458pF @ 15V
  • Maximum Rds On (Id,Vgs): 16 mOhm @ 9.6A, 10V
  • Supply and Demand Status: balanced
  • Common Use: industrial power management applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
16+ $3.8442 $61.5072
37+ $3.1543 $116.7091
57+ $3.0557 $174.1749
79+ $2.9572 $233.6188
102+ $2.8585 $291.5670
136+ $2.5629 $348.5544
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Availability: 9,700 pieces
MOQ: 16 pcs
Order Increment : 1 pcs
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