Vishay Siliconix presents its SI4632DY-T1-GE3 MOSFET designed for use in discrete semiconductor products.

• Type: N-channel MOSFET
• Package: Tape & Reel (TR)
• Mounting: SMD (SMT) technology
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
• Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V
• Vgs(th) (Max) @ Id: 2.6V @ 250μA
• Power Dissipation (max): 3.5W (Ta), 7.8W (Tc)
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC
• Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 11175 pF @ 15V
• Vgs (Max): ±16V
• Temperature Range: -55°C to 150°C (TJ)
• HTSUS code: 8541.29.0095
• Base Product Number: SI4632
• Drive Voltage (max Rds On, min Rds On): 4.5V, 10V