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Same model may have multiple batches, images only for reference.
SI4634DY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4634DY-T1-E3

Part No SI4634DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 24.5A 8-SOIC
Datasheet
SI4634DY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 24.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.6V @ 250μA
Max Gate Charge 68nC @ 10V
Max Input Capacitance 3150pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 5.7W (Tc)
Maximum Rds On at Id,Vgs 5.2 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 064499-SI4634DY-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4634DY-T1-E3 CAD Model

Description

The Vishay SI4634DY-T1-E3 is an N-channel MOSFET designed for use in discrete semiconductor products.

  • Maximum drain-source breakdown voltage: 30V
  • Continuous drain current: 24.5A @ 25°C
  • Gate-source threshold voltage: 2.6V @ 250μA
  • Maximum gate charge: 68nC @ 10V
  • Operating temperature range: -55°C to 150°C
  • Package: 8-SO
  • Supplied on: Reel
  • Supply and demand status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $1.0095 $60.5700
140+ $0.8281 $115.9340
220+ $0.8027 $176.5940
300+ $0.7762 $232.8600
385+ $0.7508 $289.0580
515+ $0.6734 $346.8010
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,290 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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