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Same model may have multiple batches, images only for reference.
SI4670DY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4670DY-T1-E3

Part No SI4670DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 25V 8A 8SOIC
Datasheet
SI4670DY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 8A
Maximum Rds On at Id,Vgs 23 mOhm @ 7A, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 18nC @ 10V
Max Input Capacitance 680pF @ 13V
Maximum Power Dissipation 2.8W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 028517-SI4670DY-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4670DY-T1-E3 CAD Model

Description

The Vishay SI4670DY-T1-E3 is a dual N-channel logic level gate FET with a maximum breakdown voltage of 25V and continuous drain current of 8A @ 25°C.

  • Maximum breakdown voltage: 25V
  • Continuous drain current: 8A @ 25°C
  • Gate-source threshold voltage: 2.2V @ 250μA
  • Maximum gate charge: 18nC @ 10V
  • Mounting: SMD mounted
  • Maximum input capacitance: 680pF @ 13V
  • Maximum Rds on @ Id,Vgs: 23 mOhm @ 7A, 10V
  • Package: 8-SO
  • Popularity status: Medium
  • Supply and demand status: Balance
  • Status: Active

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