The SI4804DY-T1-GE3 is a P-Channel 30 V (D-S) MOSFET from Vishay. This power MOSFET is designed for a wide range of applications, offering efficient power switching and management capabilities. It features low on-resistance and gate charge, contributing to reduced power losses and improved energy efficiency. This device is available in a PowerPAK® SO-8 package, making it suitable for space-constrained applications.

Applications

• Load Switching
• Power Management in Portable Devices
• DC-DC Converters
• Battery Management Systems
• Motor Control

Features

• P-Channel MOSFET
• Voltage Rating: 30 V
• Low On-Resistance (RDS(on))
• Low Gate Charge (Qg)
• PowerPAK® SO-8 Package
• Halogen-free According to IEC 61249-2-21 Definition

Benefits

• High Efficiency: Low on-resistance minimizes power dissipation, leading to higher energy efficiency in power switching applications.
• Compact Design: The PowerPAK® SO-8 package enables a smaller footprint, ideal for portable and space-constrained designs.
• Reliable Performance: Robust design ensures stable and reliable operation across a wide range of operating conditions.
• Simplified Thermal Management: The PowerPAK® package provides excellent thermal conductivity, facilitating efficient heat dissipation.
• Environmentally Friendly: Halogen-free construction contributes to environmentally conscious product designs.

Additional Details

The SI4804DY-T1-GE3 boasts a low gate threshold voltage, allowing for operation with low voltage logic. The maximum drain current is dependent on the case temperature, and appropriate thermal management techniques should be employed to ensure the device operates within its safe operating area. This MOSFET is designed to be compliant with RoHS standards. Key specifications include a drain-source voltage (VDS) of 30V, a gate-source voltage (VGS) of ±20V, and a continuous drain current (ID) that varies depending on the specific operating temperature and thermal conditions. The on-resistance (RDS(on)) is specified at different gate-source voltage levels, providing designers with detailed information for optimizing circuit performance. It uses advanced trench technology to minimize on-state resistance, provide superior switching performance and withstand high energy pulses in avalanche and commutation mode. The 'GE3' suffix indicates that it is a lead (Pb)-free and RoHS compliant device.