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Same model may have multiple batches, images only for reference.
SI4810DY-T1-E3
Same model may have multiple batches, images only for reference.

SI4810DY-T1-E3

Part No SI4810DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-Channel, 30-V (D-S) Rated MOSFET + Schottky Diode
Sample
Rohs State Need to verify
ECAD Module
Need Help

Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package SO
Continuous Drain Current (ID) 10 A
Drain to Source Resistance 13.5 mΩ
Drain to Source Voltage (Vdss) 30 V
Element Configuration Single
Fall Time 18 ns
Gate to Source Voltage (Vgs) 20 V
Height 1.55 mm
Length 5 mm
Maximum Operating Temperature 150 °C
Max Power Dissipation 2.5 W
Min Operating Temperature -55 °C
Number of Channels 1
Power Dissipation 2.5 W
Rise Time 8 ns
RoHS Non-Compliant
Turn-Off Delay Time 45 ns
Turn-On Delay Time 15 ns
Weight 186.993455 mg
Width 4 mm
Win Source Part Number 981591-SI4810DY-T1-E3
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Vishay
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian SI4810DY-T1-E3 CAD Model

Description

The Vishay SI4810DY-T1-E3 is a single-channel MOSFET designed for use in RF transistors.

  • Channels: Single
  • Application: RF Transistors
  • Drain to Source Voltage (Vdss): 30V
  • Power Dissipation: 2.5W
  • Rise Time: 8ns
  • Fall Time: 18ns
  • Package: SO
  • Length: 5mm
  • Width: 4mm
  • Height: 1.55mm
  • Mounting Type: Surface Mount
  • Gate to Source Voltage (Vgs): 20V
  • Continuous Drain Current (ID): 10A
  • Turn-On Delay Time: 15ns
  • Turn-Off Delay Time: 45ns
  • Drain to Source Resistance: 13.5mΩ
  • RoHS Compliance: Non-Compliant
  • Maximum Operating Temperature: 150°C
  • Minimum Operating Temperature: -55°C
  • Supply and Demand Status: Shortage

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