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SI4812BDY-T1-E3

Part No SI4812BDY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 7.3A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 7.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 13nC @ 5V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.4W (Ta)
Maximum Rds On at Id,Vgs 16 mOhm @ 9.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 028526-SI4812BDY-T1-E3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI4812BDY-T1-E3 CAD Model

Description

The Vishay 028526-SI4812BDY-T1-E3 is a N-channel MOSFET.

  • Case/Package: 8-SO
  • Package Type: Surface mountable
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 7.3A (Ta)
  • Gate-Source Threshold Voltage: 3V @ 250µA
  • Max Gate Charge: 13nC @ 5V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 16 mOhm @ 9.5A, 10V
  • Power Dissipation (Max): 1.4W (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Supply and Demand Status: Sufficient
  • Category: Discrete semiconductor products
  • ECCN: EAR99
  • Temperature Range - Operating: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9535 $61.9775
150+ $0.7824 $117.3600
230+ $0.7579 $174.3170
315+ $0.7334 $231.0210
410+ $0.7091 $290.7310
550+ $0.6357 $349.6350
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,000 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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