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Same model may have multiple batches, images only for reference.
SI4834BDY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4834BDY-T1-E3

Part No SI4834BDY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 5.7A 8-SOIC
Datasheet
SI4834BDY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 5.7A
Maximum Rds On at Id,Vgs 22 mOhm @ 7.5A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 11nC @ 4.5V
Maximum Power Dissipation 1.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 107929-SI4834BDY-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4834BDY-T1-E3 CAD Model

Description

The Vishay SI4834BDY-T1-E3 is a 2 N-Channel (Dual) MOSFET designed for use in a wide variety of applications.

  • Maximum Power Dissipation: 1.1W
  • Suitable for: discrete semiconductor products
  • Drain-Source Breakdown Voltage: 30V
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Rds On @ Id,Vgs: 22 mOhm @ 7.5A, 10V
  • Maximum Gate Charge: 11nC @ 4.5V
  • Package: 8-SO
  • Mounting: SMD (SMT) technology
  • Status: Obsolete(EOL)
  • Temperature Range: -55°C to 150°C (TJ)
  • Supply and Demand Status: Balance

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Quantity Unit Price Ext. Price
24+ $2.5024 $60.0576
57+ $2.0534 $117.0438
88+ $1.9891 $175.0408
120+ $1.9251 $231.0120
156+ $1.8609 $290.3004
208+ $1.6683 $347.0064
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