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SI4840BDY-T1-GE3

Part No SI4840BDY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 40V 19A 8-Pin SOIC N T/R / MOSFET N-CH 40V 19A 8SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 50nC @ 10V
Max Input Capacitance 2000pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 6W (Tc)
Maximum Rds On at Id,Vgs 9 mOhm @ 12.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 028536-SI4840BDY-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Application Field Used in Industrial, Power Management
Quantity per package 2,500
Family Name Si4840BDY
Introduction Date February 18, 2008
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian SI4840BDY-T1-GE3 CAD Model

Description

The Vishay Si4840BDY MOSFET is a high-quality MOSFET designed for use in electronic circuits.

  • Maximum Power Dissipation: 2.5W (Ta), 6W (Tc)
  • Package: 8-SO
  • Quantity per Package: 2500
  • MSL Level: 1 (Unlimited)
  • Estimated EOL Date: 2027
  • Halogen Free Compliant: Yes
  • Application: Industrial and power management applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.7075 $53.0625
155+ $0.6627 $102.7185
235+ $0.6403 $150.4705
340+ $0.5956 $202.5040
440+ $0.5732 $252.2080
545+ $0.5508 $300.1860
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 24,336 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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