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SI4858DY-T1-E3

Part No SI4858DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 13A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 13A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA (Min)
Max Gate Charge 40nC @ 4.5V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.6W (Ta)
Maximum Rds On at Id,Vgs 5.25 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 211657-SI4858DY-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4858DY-T1-E3 CAD Model

Description

The Vishay SI4858DY-T1-E3 is an N-channel MOSFET transistor with a drain-source breakdown voltage of 30V and a continuous drain current of 13A (Ta) @ 25°C.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 13A (Ta)
  • Gate-Source Threshold Voltage: 1V @ 250μA (Min)
  • Maximum Rds On @ Id,Vgs: 5.25 mOhm @ 20A, 10V
  • Package Type: reel - TR
  • Package/Case: 8-SO
  • Dimensions: 0.154" W x 0.118" L (3.90mm x 3.00mm)
  • Applications: designed for use in various electronic devices

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.5047 $58.0405
280+ $0.4146 $116.0880
435+ $0.4008 $174.3480
600+ $0.3881 $232.8600
770+ $0.3754 $289.0580
1,035+ $0.3361 $347.8635
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,500 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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