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Same model may have multiple batches, images only for reference.
SI4880DY-T1
Same model may have multiple batches, images only for reference.

SI4880DY-T1

Part No SI4880DY-T1
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFETs 30V 13A 2.5W
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Case / Package SO
Continuous Drain Current (ID) 13 A
Drain to Source Breakdown Voltage 30 V
Drain to Source Resistance 8.5 mΩ
Drain to Source Voltage (Vdss) 30 V
Element Configuration Single
Fall Time 30 ns
Gate to Source Voltage (Vgs) 25 V
Max Operating Temperature 150 °C
Max Power Dissipation 2.5 W
Min Operating Temperature -55 °C
Number of Channels 1
Number of Pins 8
Power Dissipation 2.5 W
Rise Time 9 ns
RoHS Non-Compliant
Turn-Off Delay Time 46 ns
Turn-On Delay Time 14 ns
Weight 186.993455 mg
Win Source Part Number 1153423-SI4880DY-T1
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Vishay
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI4880DY-T1 CAD Model

Description

The Vishay MOSFET Transistor is a single element configuration device with a drain-to-source voltage of 30V and a continuous drain current of 13A.

  • Drain-to-Source Voltage: 30V
  • Continuous Drain Current: 13A
  • Power Dissipation: 2.5W
  • Drain-to-Source Resistance: 8.5 mΩ
  • Gate-to-Source Voltage: 25V
  • Turn-On Delay Time: 14ns
  • Turn-Off Delay Time: 46ns
  • Rise Time: 9ns
  • Fall Time: 30ns
  • Package: SO
  • Pins: 8
  • RoHS: Non-compliant
  • Application: RF applications
  • Popularity: Medium
  • Supply and Demand: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.9794 $58.7640
145+ $0.8039 $116.5655
225+ $0.7785 $175.1625
310+ $0.7542 $233.8020
400+ $0.7288 $291.5200
535+ $0.6537 $349.7295
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Availability: 18,200 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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