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Same model may have multiple batches, images only for reference.
SI4888DY-E3 Vishay
Same model may have multiple batches, images only for reference.

SI4888DY-E3

Part No SI4888DY-E3
Manufacturer Vishay
Catalog FETs - Single
Description MOSFET N-CH 30V 11A 8-SOIC
Datasheet
SI4888DY-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Single
Manufacturer Vishay
Series TrenchFET
Packaging Reel(TR)
FET Type MOSFET N-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 11A (Ta)
Rds On (Max) @ Id, Vgs 7 mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 1.6V @ 250μA
Gate Charge (Qg) @ Vgs 24nC @ 5V
Power - Max 1.6W
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style SMD/SMT
Package 8-SOIC (0.154", 3.90mm Width)
Manufacturer Device Package 8-SO
Win Source Part Number 189997-SI4888DY-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI4888DY-E3 CAD Model

Description

The Vishay SI4888DY-E3 is a MOSFET N-channel, metal oxide transistor from the TrenchFET series.

  • Drain to Source Voltage: 30V
  • Continuous Drain Current @ 25°C: 11A
  • Rds on (Max) @ Id, Vgs: 7 mOhm @ 16A, 10V
  • Vgs(th) (Max) @ Id: 1.6V @ 250μA
  • Gate charge (Qg) @ Vgs: 24nC @ 5V
  • Input capacitance (Ciss) @ Vds: not specified
  • FET Feature: standard
  • Maximum Power: 1.6W
  • Product Type: discrete semiconductor product
  • Supply and Demand: limited

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