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Same model may have multiple batches, images only for reference.
SI4890BDY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4890BDY-T1-GE3

Part No SI4890BDY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 16A 8-SOIC
Datasheet
SI4890BDY-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.6V @ 250μA
Max Gate Charge 33nC @ 10V
Max Input Capacitance 1535pF @ 15V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 2.5W (Ta), 5.7W (Tc)
Maximum Rds On at Id,Vgs 12 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 099628-SI4890BDY-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI4890BDY-T1-GE3 CAD Model

Description

The SI4890BDY-T1-GE3 is an N-channel MOSFET manufactured by Vishay.

  • Category: discrete semiconductor product
  • Technology: designed for surface mount technology
  • Maximum Power Dissipation: 2.5W (Ta) and 5.7W (Tc)
  • Handling: capable of handling high power loads
  • Popularity: medium
  • Supply and Demand Status: sufficient

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