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Same model may have multiple batches, images only for reference.
SI4936BDY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4936BDY-T1-GE3

Part No SI4936BDY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 6.9A 8-SOIC
Datasheet
SI4936BDY-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 6.9A
Maximum Rds On at Id,Vgs 35 mOhm @ 5.9A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 15nC @ 10V
Max Input Capacitance 530pF @ 15V
Maximum Power Dissipation 2.8W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 064523-SI4936BDY-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI4936BDY-T1-GE3 CAD Model

Description

The Vishay 064523-SI4936BDY-T1-GE3 is a 2 N-Channel (Dual) logic level gate FET with a maximum power dissipation of 2.8W.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 6.9A
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 15nC @ 10V
  • Maximum Input Capacitance: 530pF @ 15V
  • Maximum Rds On at Id,Vgs: 35 mOhm @ 5.9A, 10V
  • Supply and Demand Status: limited
  • Status: active

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