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Same model may have multiple batches, images only for reference.
FDP085N10A_F102 Real Image
Same model may have multiple batches, images only for reference.

FDP085N10A_F102

Part No FDP085N10A_F102
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 96A TO-220-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 96A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 40nC @ 10V
Max Input Capacitance 2695pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 188W (Tc)
Maximum Rds On at Id,Vgs 8.5 mOhm @ 96A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 126489-FDP085N10A_F102
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FDP085N10A_F102 CAD Model

Description

The FDP085N10A_F102 is an N-channel MOSFET manufactured by Fairchild/ON Semiconductor.

  • Maximum Power Dissipation: 188W (Tc)
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 96A (Tc) at 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 40nC @ 10V
  • Maximum Input Capacitance: 2695pF @ 50V
  • Package: TO-220-3
  • Mounting: Through Hole
  • Drive Voltage: 10V (Max Rds On, Min Rds On)
  • Operating Temperature: -55°C to 175°C (TJ)

The supply and demand status is limited.

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Quantity Unit Price Ext. Price
16+ $3.2335 $51.7360
38+ $2.6531 $100.8178
59+ $2.5702 $151.6418
81+ $2.4873 $201.4713
104+ $2.4044 $250.0576
140+ $2.1557 $301.7980
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