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Same model may have multiple batches, images only for reference.
SI4943CDY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4943CDY-T1-E3

Part No SI4943CDY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 20V 8A 8-SOIC
Datasheet
SI4943CDY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 8A
Maximum Rds On at Id,Vgs 19.2 mOhm @ 8.3A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 62nC @ 10V
Max Input Capacitance 1945pF @ 10V
Maximum Power Dissipation 3.1W
Temperature Range - Operating -50°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1096042-SI4943CDY-T1-E3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI4943CDY-T1-E3 CAD Model

Description

The Vishay SI4943CDY-T1-E3 is a reliable and efficient electronic component used in various electronic applications. The supply and demand status is sufficient.

  • Type: Dual 2 P-Channel FET
  • Gate: Logic level gate
  • Manufacturer Homepage: www.vishay.com
  • Maximum Rds On: 19.2 mOhm @ 8.3A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.2636 $63.1800
115+ $1.0369 $119.2435
175+ $1.0044 $175.7700
240+ $0.9720 $233.2800
310+ $0.9396 $291.2760
415+ $0.8425 $349.6375
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 13,000 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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