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SI4965DY-T1-E3

Part No SI4965DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 8V 8SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 8V
Maximum Rds On at Id,Vgs 21 mOhm @ 8A, 4.5V
Gate-Source Threshold Voltage 450mV @ 250μA (Min)
Max Gate Charge 55nC @ 4.5V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 028565-SI4965DY-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Application Field Used in Power Management
Family Name Si4965DY
Introduction Date April 20, 2000
ECCN EAR99
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian SI4965DY-T1-E3 CAD Model

Description

The Vishay Si4965DY-T1-E3 is a dual P-channel MOSFET that is used in power management applications.

  • Type: SMD (SMT) component
  • Package: 8-SO case
  • Family: Si4965DY family
  • ECCN rating: EAR99
  • Status: obsolete
  • Alternative parts: Si4965DY-E3 and Si4931DY
  • Supply and demand status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4897 $58.7640
290+ $0.4019 $116.5510
450+ $0.3892 $175.1400
615+ $0.3777 $232.2855
795+ $0.3650 $290.1750
1,065+ $0.3269 $348.1485
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,098 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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