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SI4972DY-T1-E3

Part No SI4972DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 10.8A 8SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 10.8A, 7.2A
Maximum Rds On at Id,Vgs 14.5 mOhm @ 6A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 28nC @ 10V
Max Input Capacitance 1080pF @ 15V
Maximum Power Dissipation 3.1W, 2.5W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 098976-SI4972DY-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI4972DY-T1-E3 CAD Model

Description

The SI4972DY-T1-E3 from Vishay is a dual N-channel FET type electronic component.

  • Status: Obsolete (EOL)
  • Product Category: Discrete Semiconductor Products
  • Mounting Type: Surface Mount Device (SMD)
  • Package: 8-SO
  • Maximum Power Dissipation: 3.1W and 2.5W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 10.8A and 7.2A, respectively

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6666 $59.9940
215+ $0.5470 $117.6050
330+ $0.5299 $174.8670
455+ $0.5128 $233.3240
585+ $0.4957 $289.9845
780+ $0.4444 $346.6320
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 35,100 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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