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Same model may have multiple batches, images only for reference.
SI5856DC-T1-E3 Vishay
Same model may have multiple batches, images only for reference.

SI5856DC-T1-E3

Part No SI5856DC-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 4.4A 1206-8
Datasheet
SI5856DC-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 7.5nC @ 4.5V
Maximum Gate-Source Voltage ±8V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 1.1W (Ta)
Maximum Rds On at Id,Vgs 40 mOhm @ 4.4A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 1206-8 ChipFET
Dimension 8-SMD, Flat Lead
Win Source Part Number 108021-SI5856DC-T1-E3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI5856DC-T1-E3 CAD Model

Description

The Vishay SI5856DC-T1-E3 is a high-quality N-Channel MOSFET designed for use in a wide range of discrete semiconductor products.

  • Maximum Power Dissipation: 1.1W (Ta)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 4.4A (Ta)
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate-Source Voltage: ±8V
  • Maximum Rds On at Id, Vgs: 40 mOhm @ 4.4A, 4.5V
  • Ideal Choice: power supplies, motor control circuits, and other high-current applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.6018 $60.1800
235+ $0.4938 $116.0430
365+ $0.4784 $174.6160
500+ $0.4629 $231.4500
650+ $0.4476 $290.9400
865+ $0.4012 $347.0380
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,022 pieces
MOQ: 100 pcs
Order Increment : 1 pcs
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